发明名称 STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES AND CARRIER ABOVE CHIP
摘要 PURPOSE: A stacked microelectronic assembly with TSVS formed in stages and a carrier above a chip is provided to improve a process of connecting the font side to the back side of a semiconductor chip. CONSTITUTION: A microelectronics element(102) comprises a front side(104). A plurality of conductive pads(106) are exposed to the front side. A dielectric layer is located in a semiconductor region. The surface(103) of the first element(110) is attached to the front side of the microelectronics element by the dielectric substance. A plurality of conductive elements(114) are electrically connected to the conductive pad. The conductive elements is attached to the contact(124) of the dielectric element(126) by using the member(128) of a bond metal.
申请公布号 KR101122689(B1) 申请公布日期 2012.03.09
申请号 KR20110027368 申请日期 2011.03.28
申请人 TESSERA INC. 发明人 OGANESIAN VAGE;HABA BELGACEM;MOHAMMED ILYAS;MITCHELL CRAIG;SAVALIA PIYUSH
分类号 H01L23/48;H01L23/12 主分类号 H01L23/48
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