SEMICONDUCTOR DEVICES HAVING VERTICAL CHANNEL TRANSISTOR AND METHODS OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to secure enough process margins by using a conductive pattern as a buried bit line or a buried word line. CONSTITUTION: An active area is repetitively arranged according to a first direction and a second direction of a substrate(102). A buried word line(WL) is extended according to the first direction while facing each sidewall of the active area of a first group. The active areas of the first group are arranged according to the first direction in a row. A buried bit line(BL) is extended according to the second direction while contacting each sidewall of a second group. The active areas of the second group are arranged according to the second direction in a row.