METHOD FOR FORMING FINE PATTERNS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

PURPOSE: A method for forming a minute pattern using a mask structure and a method for manufacturing a semiconductor device using the same are provided to form minute patterns with an aspect ratio of 6 : 1 to 16 : 1 by using a mask structure made of carbon materials. CONSTITUTION: A first sacrificial layer and first mask patterns(42) are successively formed on a bottom layer. Trenches are formed in the first sacrificial layer by patterning the first sacrificial layer using the first mask patterns as an etch mask. A second sacrificial layer fills the trenches. The sacrificial layer remains in the trenches by etching a second sacrificial layer to expose the first mask patterns. Second mask patterns(72) are formed on the first mask patterns cross the trenches. Second sacrificial patterns(64) are formed in the trenches by patterning the second sacrificial layer using the second mask patterns as the etch mask.