METHOD OF CLEANING A PROCESS APPARATUS

摘要

PURPOSE: A method for cleaning a processing unit is provided to clean the inside of a reaction inside according to two regions by controlling feeding ratio of carrier gas and cleaning gas. CONSTITUTION: A substrate is loaded to the inside of a reaction chamber(S110). A thin film is evaporated on the top of the substrate(S120). Deposition gas remaining in the reaction chamber is purged(S130). A first area is cleaned by enhancing the rate of cleaning gas(S140). A second area is cleaned by enhancing the rate of carrier gas(S150). The cleaning process of the first area and the second area is repeatedly processed. The first area is an area between a shower head and a substrate support stand. The second area is an area except for the first area.