| 摘要 |
<p>PURPOSE: A semiconductor device is provided to improve a withstand voltage property by preventing a depletion layer from being spread to a third impurity area. CONSTITUTION: An N-semiconductor layer(2) is formed by interposing a dielectric unit on a main surface of a semiconductor substrate. An N type impurity area and a P type impurity area(4) are formed in a preset area of the N-semiconductor layer. A gate electrode is formed on the surfaces of the P type impurity area. A P type impurity area(6) is formed on the preset area of the N-semiconductor layer. An N type impurity area(13) is formed from the surface of the N-type semiconductor layer and a dielectric unit as a depletion layer stopper and includes higher impurity density than the impurity density of the N-semiconductor layer.</p> |
