| 摘要 |
A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode is coupled to a resistivity-switching element and includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.
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