| 摘要 |
A semiconductor device includes a device formation region including a plurality of unit regions arranged in series to each other, each unit region comprising first and second active regions alternately arranged in series to each other. The first active region extends in a first direction. The second active region extends obliquely to the first direction. A plurality of first semiconductor pillars is arranged in the first direction and in each of the first active regions. A second semiconductor pillar is in each of the second active regions. A first bit line includes a first diffusion layer in the device formation region. The first diffusion layer extends under the plurality of first semiconductor pillars and the second semiconductor pillar. The first bit line connects the plurality of first semiconductor pillars and the second semiconductor pillar. A second bit line is electrically connected to the second semiconductor pillar. |
