SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving degree of freedom in setting of the threshold voltage while suppressing reduction in channel mobility.

SOLUTION: A MOSFET 100 comprises: a silicon carbide substrate 1 including a primary surface 1A having an off angle of 50° or more to 65° or less with respect to the ä0001} surface; a buffer layer 2 and a drift layer 3 each formed on and over the primary surface 1A; a gate oxide film 91 formed on the drift layer 3; and p-type body regions 4 that are formed in the drift layer 3 so as to include a region in contact with the gate oxide film 91 and have a p-conductive type. The p-type impurity density in the p-type body regions 4 is more than or equal to 5×1016cm-3.

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