| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a Cu-Co-Si-based alloy that improves balance among electric conductivity, strength and bending workability. <P>SOLUTION: The copper alloy for an electronic material is comprised of 0.5-3.0 mass% Co and 0.1-1.0 mass% Si and the balance Cu with inevitable impurities. The ratio of Co to Si (Co/Si) by mass% is 3.5≤Co/Si≤5.0. Second phase particles where the particle diameter at the cross-section parallel to the direction of rolling is in the range of 1-50 nm, have an average particle diameter of 2-10 nm and an average distance between the second phase particles is 10-50 nm. <P>COPYRIGHT: (C)2012,JPO&INPIT |
