| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor substrate which can improve the crystallinity of a semiconductor. <P>SOLUTION: A manufacturing method for a semiconductor substrate of the present invention for manufacturing a semiconductor substrate which has a semiconductor layer crystally grown to cover a single crystal substrate 2 on a single crystal substrate 2 comprises: a process for preparing a single crystal substrate 2 with multiple projections 4 having a flat top face 4A provided on a first principal surface 2A; a process for forming a mask layer 5 which has a semiconductor layer 3 virtually does not crystally grow to coat a top face 4A of a second projection 4b, when, of the multiple projections 4, the ones which crystally grow the semiconductor layer 3 from the top face 4A are first projections 4a, and the ones positioned between the first projections 4a which do not crystally grow the semiconductor layer 3 on the top face 4A are second projections 4b; a process for crystally growing the semiconductor layer 3 to cover the single crystal substrate 2 from the top face 4A of the first projection 4a beyond the mask layer 5 on the top face 4A of the second projection 4b.Therefore, the flatness of the semiconductor layer 3 grown on the single crystal substrate 2 in relation to the single crystal substrate 2 can be improved so that the crystallinity of the semiconductor layer 3 can be improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
