| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the unconformity at an interface between the surface of monocrystalline or polycrystalline silicon and an amorphous silicon layer in a solar cell adopting a hetero-junction structure. <P>SOLUTION: A solar cell of the present invention comprises: a silicon-oxide thin film 20 which is an electrochemical oxidation film formed on a surface of a monocrystalline or polycrystalline silicon substrate 10; and an amorphous silicon layer 30 formed on the silicon-oxide thin film 20. Thus, the occurrence of microcrystallization, defects or interface state, which may otherwise occur at an interface between the silicon substrate 10 and the amorphous silicon layer 30, is reduced because a thin layer of the silicon-oxide thin film 20 is provided between the silicon substrate 10 and the amorphous silicon layer 30. As a result, an excellent interface structure is formed to thereby improve the conversion efficiency of the solar cell 100. <P>COPYRIGHT: (C)2012,JPO&INPIT |
