| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing device of a photoelectric conversion device capable of manufacturing a chalcogen compound semiconductor layer such as a high-quality I-III-VI compound semiconductor without using a highly toxic gas such as a selenide hydrogen gas. <P>SOLUTION: The manufacturing device of a photoelectric conversion device forms a light absorption layer including a metallic element and a chalcogen element by heating a precursor layer including the metallic element in an atmosphere that contains the chalcogen element. The manufacturing device of a photoelectric conversion device comprises a heating furnace 21 that stores the precursor layer and a box 26 that is disposed in the heating surface 21 and stores a chalcogen source including the chalcogen element. The box 26 is provided with a hole part 26c linked from inside to outside. <P>COPYRIGHT: (C)2012,JPO&INPIT |
