| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC Schottky barrier diode which can be formed by low temperature heat treatment and can have desired characteristics, and to provide a method of manufacturing the same. <P>SOLUTION: The silicon carbide Schottky barrier diode has a Schottky electrode 5 on the surface of a first conductivity type silicon carbide layer 3, and a guard ring layer 4 formed on the periphery of the Schottky electrode 5 to overlap a part thereof. P type impurity ions are injected into a region of an N type silicon carbide layer 3 where the guard ring layer is formed. Thereafter, the ion implantation region is recrystallized and a part of injected impurity ions are heat treated in an activation temperature range thus forming the guard ring layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
