| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for filling a trench, which can prevent a void from being formed in a filling material filled inside of the trench without forming a film inside of the trench, which serves as a barrier against oxidation. <P>SOLUTION: The method for filling the trench comprises the steps of: heating a semiconductor substrate 1 having an oxide film 7 formed at least on a side wall of a trench 6 and supplying an aminosilane-based gas to a surface of the semiconductor substrate 1 to form a seed layer 8 on the semiconductor substrate 1; heating the semiconductor substrate 1 having the seed layer 8 formed thereon and supplying a monosilane gas to a surface of the seed layer 8 to formed a silicon film 9 on the seed layer 8; filling the trench 6 of the semiconductor substrate 1 having the silicon film 9 formed thereon with a filling material 10 that is shrunk by being burned; and burning the filling material 10 for filling the trench 6 in an atmosphere containing water and/or a hydroxy group and also converting the silicon film 9 and the seed layer 8 into a silicon oxide. <P>COPYRIGHT: (C)2012,JPO&INPIT |
