| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMIS or CMOS integrated circuit device using a metal gate, which solves problems of complex processes and the like in various methods of forming different films and layers such as a gate insulation film, a metal gate layer and the like in an N channel region and a P channel region. <P>SOLUTION: The present manufacturing method of CMOS integrated circuit device comprises forming a titanium nitride film for adjusting electrical characteristics of a high dielectric gate insulation film before forming a gate electrode film at an N channel region and a P channel region, the titanium nitride film being composed of a lower film containing relatively rich titanium and an upper film containing relatively rich nitrogen. <P>COPYRIGHT: (C)2012,JPO&INPIT |
