METHOD FOR THE WET-CHEMICAL ETCHING BACK OF A SOLAR CELL EMITTER

摘要

The invention relates to a method for the wet-chemical etching of a highly doped silicon layer in an etching solution. According to the invention, in order to be able to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group comprising peroxodisulphates, peroxomonosulphates and hydrogen peroxide is used as etching solution.