NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A nonvolatile memory device is provided to prevent a leakage current by floating a path of the leakage current when a column switch is turned off. CONSTITUTION: A local column switch(LYSW) selectively connects a global bit line and a bit line of a cell array according to a column selection signal. A global column switch(GYSW) selectively connects the global bit line and a sense amplifier according to an enable signal. A switching unit(200) selectively connects or disconnects a current path of a global column switch according to a control signal corresponding to a bank active operation. The switching unit disconnects a ground voltage terminal and a body terminal of the global column switch by activating a control signal in a bank active operation and floats the body terminal.