EDGE-EMITTING SEMICONDUCTOR LASER

摘要

The invention relates to an edge-emitting semiconductor laser comprising an active, radiation-generating zone (1) and a full waveguide (8) that is suitable for guiding the radiation generated in the active zone (1) inside the semiconductor laser. The full waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5) arranged between the first n-doped layer (4) and the active zone (1). The refractive index n2 of the second n-doped layer (5) is higher than the refractive index n1 of the first n-doped layer (4) by the amount dn.