HYBRID CHANNEL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A hybrid channel semiconductor device and its manufacturing method are provided. The method comprises that a first semiconductor layer (20) including an NMOS region (I) and a PMOS region (II) is provided, its surface is covered with a second semiconductor layer (21), one of them has a higher electron conductivity than hole conductivity, the other has a higher hole conductivity than electron conductivity; a first dummy gate structure (23) and a first source region and a first drain region formed on its both sides, a second dummy gate structure (24) and a second source region and a second drain region formed on its both sides are formed in the NMOS region (I) and PMOS regions (II), respectively; an interlayer dielectric layer (30) is formed on the second semiconductor layer (21) and is planarized; the first dummy gate structure (23) and the second dummy gate structure (24) are removed to form a first opening (31) and a second opening (32); a first gate structure (33) is formed on the semiconductor layer having a higher electron conductivity within the first opening (31), a second gate structure (34) is formed on the other semiconductor layer within the second opening (32).