发明名称 |
A SLURRY COMPOSITE OF CHEMICAL MECHANICAL POLISHING PROCESS AND A METHOD OF FORMING PHASE CHANGE MEMORY DEVICE USING THE SAME |
摘要 |
PURPOSE: Slurry composition is provided to reliability of chemical mechanical polishing process including phase change material, and to control the etching rate of an etching object membrane to moderate level. CONSTITUTION: A slurry composition of chemical mechanical polishing process comprises abrasive particles(44), and a non-ionic surfactant(46). The concentration of the non-ionic surfactant in the slurry composition is 100-300 ppb. A forming method of a phase change memory device comprises a step of forming a phase change material film on a substrate(100), and a step of chemical mechanical polishing the phase change material film by using the slurry composition.
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申请公布号 |
KR20120020556(A) |
申请公布日期 |
2012.03.08 |
申请号 |
KR20100084228 |
申请日期 |
2010.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, JOON SANG;JUNG, EUI HOON;YOON, BO UN;LEE, JAE DONG |
分类号 |
C09K3/14;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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