SEMICONDUCTOR LIGHT-EMITTING DIODE CHIP, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

One aspect of the present invention provides a semiconductor light-emitting diode chip including: a light-transmitting substrate; and a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer which are sequentially formed on an upper surface of the light-transmitting substrate and a semiconductor light-emitting device including: a rear reflective type laminate which is formed on a lower surface of the light-transmitting substrate and has an optical auxiliary layer formed with a material having a predetermined refractive index and a metallic reflective layer formed on a lower surface of the optical auxiliary layer; a bonding metal layer which is provided on a lower surface of the rear reflective type laminate and is made of an eutectic metal; and a bonding laminate having a diffusion barrier which is formed to prevent the diffusion of the elements between the bonding metal layer and the metallic reflective layer.