发明名称 A SEMICONDUCTOR AND A METHOD OF FORMING THE SAME
摘要 PURPOSE: A semiconductor chip and a method for forming a semiconductor chip are provided to uniformly maintain the thickness of a semiconductor chip by etching the back side of a semiconductor chip by using an insulating layer included in the substrate as an etch stopping layer. CONSTITUTION: A semiconductor layer(105) has an active surface(10) and an non-active layer(20) which face each other. A first inter layer dielectric layer(110) is formed on the active surface of the semiconductor layer. An insulating layer(103) is arranged on the non-active layer of the semiconductor layer. A through hole(115) successively passes through the first inter layer dielectric layer, the semiconductor layer, and the insulating layer. A spacer(125) is interposed between the inner wall of the hole and a through electrode.
申请公布号 KR20120020553(A) 申请公布日期 2012.03.08
申请号 KR20100084224 申请日期 2010.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, HO JIN;JANG, DONG HYEON;SONG, HO GEON;JEONG, SE YOUNG;YOON, MIN SEUNG;KIM, JUNG HWAN
分类号 H01L21/60;H01L23/12;H01L23/48 主分类号 H01L21/60
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