PURPOSE: A semiconductor chip and a method for forming a semiconductor chip are provided to uniformly maintain the thickness of a semiconductor chip by etching the back side of a semiconductor chip by using an insulating layer included in the substrate as an etch stopping layer. CONSTITUTION: A semiconductor layer(105) has an active surface(10) and an non-active layer(20) which face each other. A first inter layer dielectric layer(110) is formed on the active surface of the semiconductor layer. An insulating layer(103) is arranged on the non-active layer of the semiconductor layer. A through hole(115) successively passes through the first inter layer dielectric layer, the semiconductor layer, and the insulating layer. A spacer(125) is interposed between the inner wall of the hole and a through electrode.
申请公布号
KR20120020553(A)
申请公布日期
2012.03.08
申请号
KR20100084224
申请日期
2010.08.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, HO JIN;JANG, DONG HYEON;SONG, HO GEON;JEONG, SE YOUNG;YOON, MIN SEUNG;KIM, JUNG HWAN