| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform highly accurate polishing by reducing a deviation amount from a target value of a film thickness after polishing without lowering productivity. <P>SOLUTION: A polishing device includes: initial film thickness measuring means 6 for measuring the initial film thickness of a film to be treated; first polishing means 14 for primarily polishing the measured films to be treated of a plurality of substrates W continuously by the polishing time calculated from a predetermined basic polishing rate; polished film thickness measuring means 15 for measuring the film thickness of the primarily polished film to be treated; and control means 20 for calculating an actual polishing rate in the primary polishing for each primarily polished substrate on the basis of the measured initial film thickness, the film thickness of the polished film to be treated and the polishing time at that time, calculating a polishing rate difference between the substrates whose polishing orders are adjacent on the basis of the calculated actual polishing rate, determining whether or not the calculated polishing rate difference is within a prescribed effective range, calculating the polishing time on the basis of the actual polishing rate to be applied on the basis of the result, and executing the control of feeding back the polishing time as the polishing time of the substrate to be primarily polished next. <P>COPYRIGHT: (C)2012,JPO&INPIT |
