| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser device in which degradation of the emission characteristics and shortening of the life of a semiconductor laser element due to excessive heating process during solder joint can be minimized. <P>SOLUTION: The method of manufacturing a two-wavelength semiconductor laser device 100 (semiconductor laser device) includes a step for forming a solder layer 12a having a melting point T1 on an electrode 11a which is formed on a heat dissipation base 10, a step for forming a solder layer 14 having a melting point T1 on an electrode 11b which is formed on the heat dissipation base 10 with a barrier layer 13 interposed therebetween, a step for forming a reaction solder layer 12 having a melting point T3 higher than T1 by melting the solder layer 12a and causing reaction of the electrode 11a and the solder layer 12a thereby joining a red semiconductor laser element 20 to the heat dissipation base 10, and a step for subsequently joining a blue-violet semiconductor laser element 30 to the heat dissipation base 10 by heating the solder layer 14 at a heating temperature T2 and melting the solder layer 14. <P>COPYRIGHT: (C)2012,JPO&INPIT |
