| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an oxide semiconductor thin film capable of improving the productivity and composition uniformity, causing no reduction in resistance in a low-temperature annealing, having a high reproducibility, and suitable for producing a large area device, in particular, a flexible device. <P>SOLUTION: In an oxide semiconductor thin film, In, Ga, and O are used as main constituent elements. A composition ratio of In and Ga is 3/4≤Ga/(In+Ga)≤9/10, and a resistivity is 1 Ωcm or more and 1×10<SP POS="POST">6</SP>Ωcm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
