发明名称 FILM DEPOSITION DEVICE, FILM DEPOSITION METHOD AND FILM DEPOSITION SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide: a film deposition device capable of forming an excellent film in which film properties that films formed by a conventional film deposition device for forming an aerosol deposition film have on a surface can be suppressed, the film properties being such as land generation and deviation of film thickness, deteriorating electrical and physical properties; a film deposition method; and a film deposition substrate including a formed deposition film. <P>SOLUTION: In the film deposition device, a powder layer having an almost uniform thickness and forming a film is formed on a surface of a substrate, carrier gas is jetted toward the power layer to form an aerosol of gas and powder near a surface of the substrate, further the powder is accelerated with gas jets to be collided against the surface of the substrate, and thereby a film can be formed. In order to form a uniform film on the substrate, for example, a mechanism capable of scanning powder placed on a mesh mask in a stationary state is used. Thus, an excellent film can be obtained and the number of steps in a manufacturing process can be also reduced. In addition, a film deposition substrate such as a circuit board for a compact and thin MCM (Multi Chip Module) with an embedded capacitor can be manufactured by the film deposition device and the film deposition method. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012046818(A) 申请公布日期 2012.03.08
申请号 JP20100214432 申请日期 2010.09.24
申请人 FUJITSU LTD 发明人 TAKENOCHI MASATOSHI;KO KATSUJI
分类号 C23C24/04 主分类号 C23C24/04
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