| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon substrate that can provide a vertical opening on the bottom of a recessed portion on the silicon substrate by using dry-etching. <P>SOLUTION: The method of processing of the silicon substrate forms a second opening 5 on the bottom portion of the first opening 4 using a patterning mask 14' having a pattern opening 10 by plasma reactive ion etching. The reactive ion etching is performed with a shield structure 11' formed in or on the silicon substrate, the shield structure preventing the inside of the first opening from being exposed to the plasma. Accordingly, distortion of sheath, called a plasma molding effect, which is attributed to the inclination of the second opening can be alleviated. <P>COPYRIGHT: (C)2012,JPO&INPIT |
