| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method that can prevent exposure of a wiring layer on an outer periphery of a semiconductor substrate. <P>SOLUTION: The semiconductor manufacturing method comprises the steps of forming an active layer on a first face of a semiconductor substrate, forming a wiring layer on the active layer, forming an insulation layer so as to cover the wiring layer, bonding the first face of the semiconductor substrate with a support substrate via the insulation layer, thinning the semiconductor substrate bonded with the support substrate so as to remain the semiconductor substrate with a predetermined thickness to cover the active layer from a second face side, forming a protection film on an outer periphery and side faces of the second face of the thinned semiconductor substrate, and removing the semiconductor substrate on which the protection film is not formed so as to expose the active layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
