| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that there is no method of specifying the depth of emergence of dislocation existing in a multilayer substrate 6, i.e., dislocation a extending from the surface to an intermediate depth, dislocation b extending from the surface to the interface 8 with the substrate, and dislocation c extending from the surface to the substrate 4 over the interface 8, and to provide a technology capable of specifying the depth of emergence of dislocation. <P>SOLUTION: A semiconductor layer is etched from the surface. Etching is carried out until flat bottom surfaces fa, fb emerge in an etch pit, or over a time required for an etch pit formed along a dislocation that penetrates a semiconductor layer 2 penetrates the semiconductor layer 2. Thereafter, depth of the emerged flat bottom surfaces fa, fb in the etch pit is specified. Since the depth is equal to the depth of emergence of dislocation, the depth of emergence of dislocation can be specified. <P>COPYRIGHT: (C)2012,JPO&INPIT |
