发明名称 HIGH-EFFICIENCY BASE-DRIVER CIRCUIT FOR POWER BIPOLAR JUNCTION TRANSISTORS
摘要 A system or module has a 3-or-more layer current-controlled switching device, such as a bipolar power transistor, for driving a load and a base driver circuit coupled to drive it. The driver has a buck-converter configuration for efficiently driving the switching device. In an embodiment, the driver has an inductor, the inductor having a first terminal coupled to a base of the bipolar junction transistor, a high-side switching device coupled to drive a second terminal of the inductor; and a rectification device coupled to the second terminal of the inductor. The driver also has a control circuit for providing a sequence of pulses through the high-side switching device when a control signal indicates the bipolar junction transistor is to be turned on.
申请公布号 WO2012030867(A2) 申请公布日期 2012.03.08
申请号 WO2011US49799 申请日期 2011.08.30
申请人 THE TRUSTEES OF DARTMOUTH COLLEGE;SULLIVAN, CHARLES, R.;TEROERDE, MICHAEL 发明人 SULLIVAN, CHARLES, R.;TEROERDE, MICHAEL
分类号 H03K17/64;H03K17/615 主分类号 H03K17/64
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