发明名称 |
HIGH-EFFICIENCY BASE-DRIVER CIRCUIT FOR POWER BIPOLAR JUNCTION TRANSISTORS |
摘要 |
A system or module has a 3-or-more layer current-controlled switching device, such as a bipolar power transistor, for driving a load and a base driver circuit coupled to drive it. The driver has a buck-converter configuration for efficiently driving the switching device. In an embodiment, the driver has an inductor, the inductor having a first terminal coupled to a base of the bipolar junction transistor, a high-side switching device coupled to drive a second terminal of the inductor; and a rectification device coupled to the second terminal of the inductor. The driver also has a control circuit for providing a sequence of pulses through the high-side switching device when a control signal indicates the bipolar junction transistor is to be turned on. |
申请公布号 |
WO2012030867(A2) |
申请公布日期 |
2012.03.08 |
申请号 |
WO2011US49799 |
申请日期 |
2011.08.30 |
申请人 |
THE TRUSTEES OF DARTMOUTH COLLEGE;SULLIVAN, CHARLES, R.;TEROERDE, MICHAEL |
发明人 |
SULLIVAN, CHARLES, R.;TEROERDE, MICHAEL |
分类号 |
H03K17/64;H03K17/615 |
主分类号 |
H03K17/64 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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