发明名称 |
Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device |
摘要 |
A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦̸x≦̸0.7). |
申请公布号 |
US2012056508(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113137689 |
申请日期 |
2011.09.02 |
申请人 |
HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HITACHI CABLE, LTD. |
发明人 |
HORIKIRI FUMIMASA;SHIBATA KENJI;SUENAGA KAZUFUMI;WATANABE KAZUTOSHI;NOMOTO AKIRA |
分类号 |
H01L41/047;B32B3/00;H01L41/09;H01L41/113;H01L41/22 |
主分类号 |
H01L41/047 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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