发明名称 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique to produce a nitride semiconductor substrate having a planarized surface by a simple method. <P>SOLUTION: A method of manufacturing a nitride semiconductor substrate includes: a preparation step in which a plate nitride semiconductor crystal 110 is prepared to have a first face 112 and a second face 114 that are opposite side with facing each other and are warped such that the first face 112 forms a convex face and the second face 114 forms a concave face; a supporting step in which the second face 114 side of the plate nitride semiconductor crystal 110 faces toward a plate 200 and the plate nitride semiconductor crystal 110 is supported by the plate 200 with the first face 112 forming a convex face and the second face 114 forming a concave face; and a planarization step in which the first face 112 of the plate nitride semiconductor crystal 110 supported by the plate 200 is planarized. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012049448(A) 申请公布日期 2012.03.08
申请号 JP20100192307 申请日期 2010.08.30
申请人 MITSUBISHI CHEMICALS CORP 发明人 TASHIRO MASAYUKI;DOI NARIHIRO
分类号 H01L21/304;B24B37/30;C30B29/38;C30B33/00 主分类号 H01L21/304
代理机构 代理人
主权项
地址