发明名称 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique to produce a nitride semiconductor substrate having a planarized surface by a simple method. <P>SOLUTION: A method of manufacturing a nitride semiconductor substrate includes: a preparation step in which a plate nitride semiconductor crystal 110 is prepared to have a first face 112 and a second face 114 that are opposite side with facing each other and are warped such that the first face 112 forms a convex face and the second face 114 forms a concave face; a supporting step in which the second face 114 side of the plate nitride semiconductor crystal 110 faces toward a plate 200 and the plate nitride semiconductor crystal 110 is supported by the plate 200 with the first face 112 forming a convex face and the second face 114 forming a concave face; and a planarization step in which the first face 112 of the plate nitride semiconductor crystal 110 supported by the plate 200 is planarized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012049448(A) |
申请公布日期 |
2012.03.08 |
申请号 |
JP20100192307 |
申请日期 |
2010.08.30 |
申请人 |
MITSUBISHI CHEMICALS CORP |
发明人 |
TASHIRO MASAYUKI;DOI NARIHIRO |
分类号 |
H01L21/304;B24B37/30;C30B29/38;C30B33/00 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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