| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a reference voltage generation circuit which can be adjusted using trimming data, which avoids influences caused by a variation of a reference voltage which is made until electric power rises. <P>SOLUTION: A semiconductor device 10 includes: a reference voltage generating unit 1 which generates, based on an external power supply voltage VCC, a first reference voltage V1 which is adjusted in response to trimming data TRM1, and a second reference voltage V2 which is independent from the trimming data TRM1, a non-volatile memory 3 which activates by a voltage based on the first reference voltage V1 and stores the trimming data TRM1, a power-on reset circuit 5 which switches a logic level of a reset signal when the external power supply voltage VCC reaches constant multiple of the second reference voltage V2 while electric power is rising, a control circuit 6 which makes the reference voltage generating unit 1 read the trimming data TRM1 stored in the non-volatile memory 3, in response to switching of the logic level of the reset signal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
