发明名称 ION DOPING APPARATUS AND ION DOPING METHOD
摘要 When hydrogen is introduced into a plasma chamber which includes the dielectric plate as part of an exterior wall, and surface waves are generated on the dielectric plate using microwaves, a region where negative hydrogen ions are easily generated is formed in the plasma chamber. Since only hydrogen negative ions each with a molecular weight of 1 are generated, only ions with the same mass can be added to an object by application of an electric field, without mass separation.
申请公布号 US2012056101(A1) 申请公布日期 2012.03.08
申请号 US201113219189 申请日期 2011.08.26
申请人 KIKUCHI ERUMU;SEKINE WATARU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIKUCHI ERUMU;SEKINE WATARU
分类号 H01J27/16 主分类号 H01J27/16
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