发明名称 LIGHT EMITTING DEVICE
摘要 PURPOSE: A light emitting device is provided to improve light extraction efficiency by arranging a slanted surface around the light emitting device. CONSTITUTION: A light emitting structure(120) comprises a first conductivity type semiconductor layer(122), an active layer(124), and a second conductivity type semiconductor layer(126). A first ohmic layer(180) and a first electrode are arranged on the first conductivity type semiconductor layer. A second electrode is arranged on the second conductivity type semiconductor layer. Oxygen with an atomic ratio of 5 percent or more or nitrogen with an atomic ratio of 50 percent or more is included in a contact region of the first ohmic layer and the first conductivity type semiconductor layer. The contact region of the first conductivity type semiconductor layer is processed with plasma in an oxygen or nitrogen atmosphere.
申请公布号 KR20120020436(A) 申请公布日期 2012.03.08
申请号 KR20100084055 申请日期 2010.08.30
申请人 LG INNOTEK CO., LTD. 发明人 JEONG, HWAN HEE;LEE, SANG YOUL;CHOI, KWANG KI;SONG, JUNE O
分类号 H01L33/40;H01L33/32;H01L33/36 主分类号 H01L33/40
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