| 摘要 |
PURPOSE: A method for manufacturing a bottom electrode of a capacitor of a semiconductor device is provided to control the generation of a seam in a sidewall of a support layer by improving the metal deposition rate of the support layer more than the metal deposition rate of a sacrificial dielectric film. CONSTITUTION: A bottom electrode area is formed by etching a support layer and a sacrificial dielectric film. A metal layer is buried in a front side to fill the bottom electrode area. A bottom electrode(182), from which a node is separated, is formed by performing a planarization process for the metal layer. The sacrificial dielectric film is removed with a full dip-out process. An exterior wall of the bottom electrode, from which the node is separated, is exposed. |
