发明名称 SEMICONDUCTOR MEMORY APPARATUS
摘要 PURPOSE: A semiconductor memory apparatus is provided to reduce the size of a circuit by including a data reading/writing common current operation part. CONSTITUTION: A data transmission part controls access to a memory cell according to a voltage level of a selection signal. A selection signal output part(250) outputs a selection signal which has a first control voltage level in a data writing state. The selection signal output part outputs a selection signal which has a second control voltage level in a data reading state. A data detection part(230) outputs reading data according to a detection result by detecting voltage generated by a sensing current supplied to the memory cell through the data transmission part. The second control voltage level is lower than the first control voltage level.
申请公布号 KR20120020218(A) 申请公布日期 2012.03.08
申请号 KR20100083295 申请日期 2010.08.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, TAE HUN;KIM, DONG KEUN
分类号 G11C13/02;G11C5/14;G11C7/06;G11C7/22 主分类号 G11C13/02
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