发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
PURPOSE: A semiconductor memory apparatus is provided to reduce the size of a circuit by including a data reading/writing common current operation part. CONSTITUTION: A data transmission part controls access to a memory cell according to a voltage level of a selection signal. A selection signal output part(250) outputs a selection signal which has a first control voltage level in a data writing state. The selection signal output part outputs a selection signal which has a second control voltage level in a data reading state. A data detection part(230) outputs reading data according to a detection result by detecting voltage generated by a sensing current supplied to the memory cell through the data transmission part. The second control voltage level is lower than the first control voltage level.
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申请公布号 |
KR20120020218(A) |
申请公布日期 |
2012.03.08 |
申请号 |
KR20100083295 |
申请日期 |
2010.08.27 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YOON, TAE HUN;KIM, DONG KEUN |
分类号 |
G11C13/02;G11C5/14;G11C7/06;G11C7/22 |
主分类号 |
G11C13/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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