| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element capable of reducing a driving voltage. <P>SOLUTION: A light-emitting element 1 has a semiconductor lamination structure consisting of a nitride semiconductor obtained by laminating a first semiconductor layer 23 of a first conductivity type, a light-emitting layer 25, and a second semiconductor layer 27 of a second conductivity type different from the first conductivity type, and removing a part of the second semiconductor layer 27 and the light-emitting layer 25 to expose the first semiconductor layer 23. The light-emitting element 1 has a recessed part 41b formed at an exposed part of the first semiconductor layer 23, a first electrode 40 formed on the recessed part 41b and Ohmic-contacted with the first semiconductor layer 23, and a second electrode 30 Ohmic-contacted with the second semiconductor layer 27 and surrounding the first electrode 40 in a plan view. <P>COPYRIGHT: (C)2012,JPO&INPIT |
