| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a pattern with a small defect density. <P>SOLUTION: The pattern forming method includes: (a) forming a film using a chemical amplification type resist composition; (b) exposing the film; and (c) developing the exposed film using a developer containing a first organic solvent. The developer has a density of particles having a particle diameter of 0.3 μm or more of 30 pieces/mL. <P>COPYRIGHT: (C)2012,JPO&INPIT |
