| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same that can further reduce an on-resistance compared with a conventional structure. <P>SOLUTION: An interlayer insulating film 8 is provided on surfaces of an n<SP POS="POST">+</SP>source region 4 and a gate trench Tg. A part of the interlayer insulating film 8 is opened, and both-end corners are rounded. A contact trench Tc is provided to a semiconductor substrate below the opening. An n<SP POS="POST">++</SP>source region 4a whose impurity density is highly constant and whose depth is 1/2 to 2/3 of the depth of the contact trench Tc is formed on a sidewall surface part of the contact trench Tc in a depth direction by the oblique ion implantation. A straight line that makes an implantation angle of the oblique ion implantation with the semiconductor substrate surface and contacts with an end part corner of the interlayer insulating film 8, crosses with the contact trench Tc sidewall at a lower end of the n<SP POS="POST">++</SP>source region 4a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
