发明名称 Latch Based Memory Device
摘要 A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.
申请公布号 US2012057411(A1) 申请公布日期 2012.03.08
申请号 US20100876560 申请日期 2010.09.07
申请人 KOEPPE SIEGMAR;KAMP WINFRIED;AUNIS JULIE 发明人 KOEPPE SIEGMAR;KAMP WINFRIED;AUNIS JULIE
分类号 G11C7/10;G11C29/00 主分类号 G11C7/10
代理机构 代理人
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