METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP

摘要

Provided is a method for manufacturing an LED chip, which includes: a step wherein a wafer is prepared, said wafer having a semiconductor layer (110') formed on the side of the first main surface (126) of a substrate (120'), which has the first main surface (126), and the second main surface (127) on the reverse side of the first main surface; a first irradiation step wherein the wafer is irradiated with a laser beam by having a light collecting point (F1) inside of the wafer, and a first modified region (122a) that can be used to divide the wafer is formed in the first direction; and a second irradiation step wherein the wafer is irradiated with a laser beam by having a light collecting point (F2) inside of the wafer, and a second modified region (122b) that can be used to divide the wafer is formed in the second direction different from the first direction. When a shortest distance from the surface on the side where the semiconductor layer (110') of the wafer is formed to the light collecting point in the first irradiation step is denoted by Dmin1, and a shortest distance from the surface on the side where the semiconductor layer of the wafer is formed to the light collecting point in the second irradiation step is denoted by Dmin2, the inequality of Dmin1min2 is satisfied.