SILICON ETCHANT AND METHOD FOR PRODUCING TRANSISTOR BY USING SAME

摘要

The present invention provides: an etchant that selectively etches a silicon-made dummy gate and that is used for etching the silicon-made dummy gate in a method for removing the silicon-made dummy gate and replacing same with an aluminum metal gate to thereby produce a transistor that includes a laminate comprising at least a high dielectric material film and the aluminum metal gate; and a method for producing a transistor by using said etchant. Disclosed is a silicon etchant that is used for etching the silicon-made dummy gate and that contains: 0.1-40% by weight of at least one type of alkali compound selected from ammonia, diamines, and polyamines represented by general formula (1); 5-50% by weight of at least one type of polyol selected from polyols represented by general formula (2); and 40-94.9% by weight of water. Also disclosed is a method for producing a transistor by using the silicon etchant.