发明名称 |
FLASH MEMORY DEVICE AND OPERATING METHOD THEREOF |
摘要 |
PURPOSE: A flash memory device and an operating method thereof are provided to accurately sense an amount of currents reflecting data stored in a memory cell by constantly controlling a bit line current corresponding to data in a read operation. CONSTITUTION: A memory cell string is formed by serially connecting a plurality of memory cells between a bit line and a source line. A page buffer(730) senses data and precharges the bit line. A power supply unit(740) supplies a preset power voltage through a source line before a precharging operation. A source line driving unit(720) drives the source line as a ground power voltage in an evolution operation of the bit line.
|
申请公布号 |
KR20120020388(A) |
申请公布日期 |
2012.03.08 |
申请号 |
KR20100083971 |
申请日期 |
2010.08.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, JUNG HWAN;PARK, SEONG JE |
分类号 |
G11C16/30;G11C16/06;G11C16/08;G11C16/24 |
主分类号 |
G11C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|