发明名称 FLASH MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 PURPOSE: A flash memory device and an operating method thereof are provided to accurately sense an amount of currents reflecting data stored in a memory cell by constantly controlling a bit line current corresponding to data in a read operation. CONSTITUTION: A memory cell string is formed by serially connecting a plurality of memory cells between a bit line and a source line. A page buffer(730) senses data and precharges the bit line. A power supply unit(740) supplies a preset power voltage through a source line before a precharging operation. A source line driving unit(720) drives the source line as a ground power voltage in an evolution operation of the bit line.
申请公布号 KR20120020388(A) 申请公布日期 2012.03.08
申请号 KR20100083971 申请日期 2010.08.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, JUNG HWAN;PARK, SEONG JE
分类号 G11C16/30;G11C16/06;G11C16/08;G11C16/24 主分类号 G11C16/30
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