POLYSILICON RESISTORS FORMED IN A SEMICONDUCTOR DEVICE COMPRISING HIGH-K METAL GATE ELECTRODE STRUCTURES

摘要

PURPOSE: Poly-crystal resistance which is formed in a semiconductor device including a high-k metal-gate electrode structure is provided to get an exact resistance value by using polycrystalline silicon materials. CONSTITUTION: A gate node structure(160A) comprises a first stack(110A). The first stack comprises high-k gate dielectric materials and metal-containing electrode materials. The metal-containing electrode materials are formed on the high-k gate dielectric materials. A second stack(110B) comprises the high-k gate dielectric materials, the metal-containing electrode materials, and poly-silicon electrode materials. The poly-silicon electrode materials are formed on the metal-containing electrode materials.