| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having high pixel density that enables expansion of dynamic range, a high-speed shutter, and a lowered drive voltage. <P>SOLUTION: A pixel 1a comprises at least four first to fourth semiconductor layers 5a to 5d that share a second semiconductor region 3. The first semiconductor layer 5a has a first semiconductor region 2 electrically connected to a first external circuit and a third semiconductor region 4 that is separated from the first semiconductor region by the second semiconductor region 3 and is electrically connected to a second external circuit. In the second semiconductor layer 5b, insulating films 6a and 6b, and an MOS transistor having gate conductor electrodes 7a and 7b electrically connected to a third external circuit are formed. The third semiconductor layer 5c has a photodiode composed of the second semiconductor region 3 and fourth semiconductor regions 8a and 8b. A junction transistor in which the fourth semiconductor regions are gates, one of the first semiconductor region and a fifth semiconductor region is a drain, and the other is a source is formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
