发明名称 |
SPIN INJECTION ELECTRODE STRUCTURE, SPIN TRANSPORT ELEMENT, AND SPIN TRANSPORT DEVICE |
摘要 |
The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.
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申请公布号 |
US2012056254(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113216965 |
申请日期 |
2011.08.24 |
申请人 |
SASAKI TOMOYUKI;OIKAWA TOHRU;NOGUCHI KIYOSHI;SUZUKI TOSHIO;AKITA PREFECTURE;TDK CORPORATION |
发明人 |
SASAKI TOMOYUKI;OIKAWA TOHRU;NOGUCHI KIYOSHI;SUZUKI TOSHIO |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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