| 发明名称 |
BACK CONTACT DIFFUSION BARRIER LAYERS FOR GROUP IBIIIAVIA PHOTOVOLTAIC CELLS |
| 摘要 |
The present invention provides for new ohmic contact materials and diffusion barriers for Group IBIIIAVIA based solar cell structures, which eliminate two way diffusion while preserving the efficient ohmic contacts between the substrate and the absorber layers.
|
| 申请公布号 |
US2012055543(A1) |
申请公布日期 |
2012.03.08 |
| 申请号 |
US20100875669 |
申请日期 |
2010.09.03 |
| 申请人 |
PINARBASI MUSTAFA;FREITAG JAMES;VASQUEZ JORGE;SOLOPOWER, INC. |
发明人 |
PINARBASI MUSTAFA;FREITAG JAMES;VASQUEZ JORGE |
| 分类号 |
H01L31/0296;H01L31/18 |
主分类号 |
H01L31/0296 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
