发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
According to one embodiment, a semiconductor light emitting device includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer. The first conductivity type layer has a superlattice structure. First semiconductor layers and second semiconductor layers are alternately provided in the superlattice structure. The first semiconductor layers include a first nitride semiconductor and the second semiconductor layers include a second nitride semiconductor having a larger lattice constant than the first nitride semiconductor. The light emitting layer has a multi-quantum well structure. Quantum well layers and barrier layers are alternately provided in the multi-quantum well structure. The quantum well layers include a third nitride semiconductor having a smaller lattice constant than the second nitride semiconductor and the barrier layers include a fourth nitride semiconductor having a smaller lattice constant than the third nitride semiconductor. At least one of the quantum well layers has lattice spacing equal to the lattice constant of the third nitride semiconductor. |
申请公布号 |
US2012056156(A1) |
申请公布日期 |
2012.03.08 |
申请号 |
US201113207824 |
申请日期 |
2011.08.11 |
申请人 |
KIKUCHI TAKUO;YABUHARA HIDEHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KIKUCHI TAKUO;YABUHARA HIDEHIKO |
分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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