| 摘要 |
<p>The present invention relates to an apparatus for processing a surface (4) of a substrate (6). The apparatus comprises a nozzle head (2) for subjecting the surface (4) of the substrate (6) to successive surface reactions of at least a first precursor (A) and a second precursor (B). The nozzle head (2) comprises one or more first precursor nozzles (8) for subjecting the surface (4) of the substrate (6) to the first precursor (A), one or more second precursor nozzles (10) for subjecting the surface (4) of the substrate (6) to the second precursor (B), and one or more purge gas zones (12) between the first and second precursor nozzles (8, 10). According to the invention the nozzle head (2) is arranged to be moved along a loop over the surface (4) of the substrate (6) such that the orientation of the first and second precursor nozzles (8, 10) is maintained substantially constant.</p> |
